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Select | Datasheet | Image | ModelNo. | Manufacturer | Video | Products | Description | Wavelength λP[nM] | Luminous Intensity [mcd] | Luminous Flux [lm] | Radiometric Power [mW] | Irradiance Po[mW/sr] | Forward voltage Vf[V] | Forward current If[mA] | Package | Package Size | Country of origin | Group | Add to cart |
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C1050D-35 | Ushio | LED Chips | Infrared LED Chips / Dice | 1050nM | 5.6mW | 1.2V | 50mA | InGaAsP (Au Pad) | 320 x 320μm | Japan | S23 | Add to cart | |||||||
EOLC-1050-11 | EPIGAP | LED Chips | Infrared LED Chips / Dice | 1050nM | 30mW | 1.2V | 350mA | GaAs / P (anode) up | 960 x 960μm | Germany | S97 | Add to cart |
Update date & time: Jan-11th-2023 23:34
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