Matches:5
Select | Datasheet | Image | ModelNo. | Manufacturer | Video | Products | Description | Wavelength λP[nM] | Luminous Intensity [mcd] | Luminous Flux [lm] | Radiometric Power [mW] | Irradiance Po[mW/sr] | Forward voltage Vf[V] | Forward current If[mA] | Package | Package Size | Country of origin | Group | Add to cart |
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C1650D-35 | Ushio | LED Chips | Infrared LED Chips / Dice | 1650nM | 1.6mW | 1V | 50mA | InGaAsP (Au Pad) | 320 x 320μm | Japan | S23 | Add to cart | |||||||
E6AFRS | Dowa | LED Chips | Infrared LED Chips / Dice | 1650nM | 1.9mW | 0.9V | 20-100mA | 350 x 350 x 180μm | Japan | S25 | Add to cart | ||||||||
EOLC-1650-21 | EPIGAP | LED Chips | Infrared LED Chips / Dice | 1650nM | 50mW | 1V | 1000mA | InGaAs - based material / n (cathode) up | 1080 x 1080μm | Germany | S97 | Add to cart | |||||||
EOLC-1650-27 | EPIGAP | LED Chips | Infrared LED Chips / Dice | 1650nM | 1.9mW | 0.85V | 20mA | InGaAs - based material / n (cathode) up | 350 x 350μm | Germany | S97 | Add to cart | |||||||
EOLC-1650-17-1 | EPIGAP | LED Chips | Infrared LED Chips / Dice | 1650nM | 2.5mW | 0.8V | 100mA | InGaAs/InP, MQW / P (anode) up | 360 x 360μm | Germany | S97 | Add to cart |
Update date & time: Jan-11th-2023 23:34
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