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  • Wavelength
    λP[nM]


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  • Luminous
    Intensity
    [mcd]


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  • Luminous
    Flux
    [lm]


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  • Radiometric
    Power
    [mW]


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  • Irradiance
    Po[mW/sr]


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  • Forward
    voltage
    Vf[V]


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  • Forward
    current
    If[mA]


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  • Directivity
    2Δθ[°]


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Matches:10
Select Datasheet Image Model No. Products Wavelength λP[nM] Luminous Intensity [mcd] Luminous Flux [lm] Radiometric Power [mW] Irradiance Po[mW/sr] Forward voltage Vf[V] Forward current If[mA] Directivity 2Δθ[°] Type Package Package Size Country of origin Group Add to cart
YL-C730nM-7mW Infrared LED Chips / Dice 730nM 7mW 2V 20mA Chip / Die AlGaInP 360 x 360μm Taiwan S28 Add to cart
YL-C730nM-250mW Infrared LED Chips / Dice 730nM 250mW 2V 350mA Chip / Die AlGaInP 1150 x 1150μm Taiwan S28 Add to cart
YL-C925nM-1mW Infrared LED Chips / Dice 925nM 1mW 1.6V 20mA Chip / Die AlGaAs 217 x 217μm Taiwan S28 Add to cart
YL-C625nM-400mcd Red LED Chips / Dice 625nM 400mcd 2V 20mA Chip / Die AlGaInP 260 x 260μm Taiwan S28 Add to cart
YL-C500nM-4mW Green LED Chips / Dice 500nM 4mW 3.2V 20mA Chip / Die InGaN 355 x 355μm Taiwan S28 Add to cart
YL-C1310nM-0.1mW Infrared LED Chips / Dice 1310nM 0.1mW 0.9V 20mA Chip / Die InGaAsP 330 x 330μm Taiwan S28 Add to cart
YL-PC410-V Blue LED Chips / Dice 410-440nM 500mW 3-3.8V 350mA Chip / Die InGaN 1160 x 1160μm Taiwan S28 Add to cart
YL-PC400-U UV LED Chips / Dice 380-410nM 750mW 3.8V 500mA Chip / Die InGaN 1210 x 1210μm Taiwan S28 Add to cart
YL-GaAs-940nM Infrared LED Wafer 940nM Wafer GaAs Wafer 4 inch Taiwan S28 Add to cart
YL-GaAs-850nM Infrared LED Wafer 850nM Wafer GaAs Wafer 4 inch Taiwan S28 Add to cart
Update date & time: Aug-27th-2019 18:04

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