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  • Wavelength
    λP[nM]


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  • Luminous
    Intensity
    [mcd]


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  • Luminous
    Flux
    [lm]


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  • Radiometric
    Power
    [mW]


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  • Irradiance
    Po[mW/sr]


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  • Forward
    voltage
    Vf[V]


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  • Forward
    current
    If[mA]


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  • Directivity
    2Δθ[°]


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Matches:11
Select Datasheet Image Model No. Products Wavelength λP[nM] Luminous Intensity [mcd] Luminous Flux [lm] Radiometric Power [mW] Irradiance Po[mW/sr] Forward voltage Vf[V] Forward current If[mA] Directivity 2Δθ[°] Type Package Package Size Country of origin In Stock Group Add to cart
YL-C1070nM-5mW Infrared LED Chips / Dice 1070nM 5mW 1.25V 20mA Chip / Die InAlGaAs 350 x 350μm Japan S25 Add to cart
YL-C1040nM-6.9mW Infrared LED Chips / Dice 1040nM 5mW 1.25V 20mA Chip / Die InAlGaAs 350 x 350μm Japan S25 Add to cart
YL-C950nM-7mW Infrared LED Chips / Dice 950nM 7mW 1.25V 20mA Chip / Die InAlGaAs 350 x 350μm Japan S25 Add to cart
YL-C940nM-1.8mW Infrared LED Chips / Dice 940nM 1.8mW 1.25V 20mA Chip / Die GaAlAs/GaAs 250 x 275μm Japan S39 Add to cart
YL-C935nM-2.5mW Infrared LED Chips / Dice 935nM 2.5mW 1.25V 20mA Chip / Die GaAlAs/GaAs 240 x 260μm Japan S39 Add to cart
YL-C940nM-1.2mW Infrared LED Chips / Dice 940nM 1.2mW 1.25V 20mA Chip / Die GaAs/GaAs 210 x 235μm Japan S39 Add to cart
YL-C940nM-1.6mW Infrared LED Chips / Dice 940nM 1.6mW 1.25V 20mA Chip / Die GaAs/GaAs 240 x 270μm Japan S39 Add to cart
YL-C910nM-1.4mW Infrared LED Chips / Dice 910nM 1.4mW 1.25V 20mA Chip / Die GaAlAs 320 x 375μm Japan S39 Add to cart
YL-C940-1.8mW Infrared LED Chips / Dice 940nM 1.8mW 1.25V 20mA Chip / Die AlGaAs/GaAs 275 x 275μm Japan S39 Add to cart
YL-C940-E4 Infrared LED Chips / Dice 940nM 2mW 1.25V 20mA Chip / Die AlGaAs 240 x 240μm Japan S25 Add to cart
YL-C910-GF Infrared LED Chips / Dice 910nM 1mW 1.25V 20mA Chip / Die AlGaAs 280 x 280μm Japan S25 Add to cart
Update date & time: Feb-01st-2019 19:01

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