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  • Wavelength
    λP[nM]


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    Intensity
    [mcd]


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    Flux
    [lm]


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    Power
    [mW]


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  • Irradiance
    Po[mW/sr]


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  • Forward
    voltage
    Vf[V]


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  • Forward
    current
    If[mA]


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  • Directivity
    2Δθ[°]


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Matches:13
Select Datasheet Image Model No. Products Wavelength λP[nM] Luminous Intensity [mcd] Luminous Flux [lm] Radiometric Power [mW] Irradiance Po[mW/sr] Forward voltage Vf[V] Forward current If[mA] Directivity 2Δθ[°] Type Package Package Size Country of origin In Stock Group Add to cart
YL-TO18F(90)-650nM(1mW) TO-18 Infrared Point Source LED 650nM 1mW 0.3mW/sr 2V 20mA 90° TO-CAN TO-18 TO18-FLAT Korea S128 Add to cart
YL-PSC650nM(90)-1mW Point Source LED Chip 650nM 1mW 0.3mW/sr 2V 20mA 90° Chip / Die AlGaInP 220 x 310μm Korea S128 Add to cart
YL-PSC650nM-1mW Point Source LED Chip 650nM 1mW 2V 16mA Chip / Die AlGaInP 250 x 400μm Japan S25 Add to cart
YL-C940nM-1mW Infrared LED Chips / Dice 940nM 1mW 1.3V 20mA Chip / Die GaAs/GaAs 190 x 215μm Japan S39 Add to cart
YL-C830nM-1mW Infrared LED Chips / Dice 830nM 1mW 1.5V 20mA Chip / Die GaAlAs/GaAs 270 x 325μm Japan S39 Add to cart
YL-C910-GF Infrared LED Chips / Dice 910nM 1mW 1.25V 20mA Chip / Die AlGaAs 280 x 280μm Japan S25 Add to cart
YL-C810-CE Infrared LED Chips / Dice 810nM 1mW 1.65V 20mA Chip / Die AlGaAs 370 x 370μm Japan S25 Add to cart
YL-C770-B9 Infrared LED Chips / Dice 770nM 1mW 1.8V 20mA Chip / Die AlGaAs 320 x 320μm Japan S25 Add to cart
YL-C730-B3 Infrared LED Chips / Dice 730nM 1mW 1.8V 20mA Chip / Die AlGaAs 320 x 320μm Japan S25 Add to cart
YL-C700-B2 Infrared LED Chips / Dice 700nM 1mW 1.8V 20mA Chip / Die AlGaAs 320 x 320μm Japan S25 Add to cart
YL-C660-AW Infrared LED Chips / Dice 660nM 1mW 1.8V 20mA Chip / Die AlGaAs 280 x 280μm Japan S25 Add to cart
YL-C660-A6 Infrared LED Chips / Dice 660nM 1mW 1.8V 20mA Chip / Die AlGaAs 280 x 280μm Japan S25 Add to cart
YL-BL151212H TO-18 Infrared LED 650nM 1mW 2.8V 20mA 36° TO-CAN TO-18 TO18-FLAT Japan S95 Add to cart
Update date & time: Mar-24th-2019 17:03

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