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  • Wavelength
    λP[nM]


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    Intensity
    [mcd]


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    Flux
    [lm]


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    Power
    [mW]


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  • Irradiance
    Po[mW/sr]


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  • Forward
    voltage
    Vf[V]


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  • Forward
    current
    If[mA]


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  • Directivity
    2Δθ[°]


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Matches:13
Select Datasheet Image Model No. Products Wavelength λP[nM] Luminous Intensity [mcd] Luminous Flux [lm] Radiometric Power [mW] Irradiance Po[mW/sr] Forward voltage Vf[V] Forward current If[mA] Directivity 2Δθ[°] Type Package Package Size Country of origin In Stock Group Add to cart
YL-PSC650nM-J5W Point Source LED Chip 650nM 1.2mW 1.9V 16mA Chip / Die AlGaAs 250 x 400μm Japan S25 Add to cart
YL-TO18F(90)-650nM(1mW) TO-18 Infrared Point Source LED 650nM 1mW 0.3mW/sr 2V 20mA 90° TO-CAN TO-18 TO18-FLAT Korea S128 Add to cart
YL-PSC650nM(90)-1mW Point Source LED Chip 650nM 1mW 0.3mW/sr 2V 20mA 90° Chip / Die AlGaInP 220 x 310μm Korea S128 Add to cart
YL-PSC650nM-1.5mW Point Source LED Chip 650nM 1.5mW 2V 20mA Chip / Die AlGaInP 350 x 350μm Japan S25 Add to cart
YL-PSC650nM-1.2mW Point Source LED Chip 650nM 1.2mW 2.2V 20mA Chip / Die AlGaInP 180 x 320μm Japan S25 Add to cart
YL-PSC650nM-1mW Point Source LED Chip 650nM 1mW 2V 16mA Chip / Die AlGaInP 250 x 400μm Japan S25 Add to cart
YL-PSC650nM-0.55mW Point Source LED Chip 650nM 0.55mW 2V 16mA Chip / Die AlGaInP 250 x 400μm Japan S25 Add to cart
YL-C650-4000mcd Red LED Chips / Dice 650nM 4000mcd 2.1V 20mA Chip / Die GaAsP/GaP 240 x 280μm Japan S39 Add to cart
16-213/R8D-FL2M2VZ/4T 0402 SMD Red LED 650nM 14.5mcd 1.7-2.2V 10mA 120° SMD SMD-0402 1.00 x 0.50mm China S30 Add to cart
YL-BL151212H TO-18 Infrared LED 650nM 1mW 2.8V 20mA 36° TO-CAN TO-18 TO18-FLAT Japan S95 Add to cart
YL-BL151101H TO-18 Infrared LED 650nM 0.8mW 2.8V 20mA 120° TO-CAN TO-18 TO18-FLAT Japan S95 Add to cart
YL-BL051101 TO-18 Infrared LED 650nM 0.2mW 3V 20mA 120° TO-CAN TO-18 TO18-FLAT Japan S95 Add to cart
YLR-050L40-3046B-LL 5mm THT Red LED 650nM 450mcd 1.85-2.4V 20mA 25° THT Φ5 5mm-Round China S88 Add to cart
Update date & time: Mar-24th-2019 17:03

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