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  • Wavelength
    λP[nM]


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  • Luminous
    Intensity
    [mcd]


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  • Luminous
    Flux
    [lm]


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  • Radiometric
    Power
    [mW]


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  • Irradiance
    Po[mW/sr]


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  • Forward
    voltage
    Vf[V]


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  • Forward
    current
    If[mA]


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  • Directivity
    2Δθ[°]


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Matches:12
Select Datasheet Image Model No. Products Wavelength λP[nM] Luminous Intensity [mcd] Luminous Flux [lm] Radiometric Power [mW] Irradiance Po[mW/sr] Forward voltage Vf[V] Forward current If[mA] Directivity 2Δθ[°] Type Package Package Size Country of origin Group Add to cart
YL-C625nM-400mcd Red LED Chips / Dice 625nM 400mcd 2V 20mA Chip / Die AlGaInP 260 x 260μm Taiwan S28 Add to cart
YL-PSC850nM(120)-2mW Point Source LED Chip 850nM 2mW 1.6V 30mA 120° Chip / Die AlGaInP 220 x 340μm Korea S128 Add to cart
YL-PSC650nM(90)-1mW Point Source LED Chip 650nM 1mW 0.3mW/sr 2V 20mA 90° Chip / Die AlGaInP 220 x 310μm Korea S128 Add to cart
YL-PSC650nM-1.5mW Point Source LED Chip 650nM 1.5mW 2V 20mA Chip / Die AlGaInP 350 x 350μm Japan S25 Add to cart
YL-PSC650nM-1.2mW Point Source LED Chip 650nM 1.2mW 2.2V 20mA Chip / Die AlGaInP 180 x 320μm Japan S25 Add to cart
YL-PSC870nM-1.6mW Point Source LED Chip 870nM 1.6mW 1.6V 16mA Chip / Die AlGaInP 345 x 345μm Japan S25 Add to cart
YL-PSC860nM-0.8mW Point Source LED Chip 860nM 0.8mW 1.5V 16mA Chip / Die AlGaInP 190 x 330μm Japan S25 Add to cart
YL-PSC850nM-0.7mW Point Source LED Chip 850nM 0.7mW 1.8V 16mA Chip / Die AlGaInP 190 x 330μm Japan S25 Add to cart
YL-PSC850nM-0.5mW Point Source LED Chip 850nM 0.5mW 1.4V 16mA Chip / Die AlGaInP 350 x 350μm Japan S25 Add to cart
YL-PSC650nM-1mW Point Source LED Chip 650nM 1mW 2V 16mA Chip / Die AlGaInP 250 x 400μm Japan S25 Add to cart
YL-PSC650nM-0.55mW Point Source LED Chip 650nM 0.55mW 2V 16mA Chip / Die AlGaInP 250 x 400μm Japan S25 Add to cart
YL-C620nM-6.5mW Red LED Chips / Dice 620nM 6.5mW 2.1V 20mA Chip / Die AlGaInP 320 x 320μm Japan S25 Add to cart
Update date & time: Jul-19th-2019 11:29

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