Update date & time: Dec-16th-2021 14:39
| Datasheet | Image | ModelNo. | Manufacturer | Video | Products | Description | Wavelength λP[nM] | Luminous Intensity [mcd] | Luminous Flux [lm] | Radiometric Power [mW] | Irradiance Po[mW/sr] | Forward voltage Vf[V] | Forward current If[mA] | Package | Package Size | Country of origin | Group |
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EOLC-1060-17-1 | EPIGAP | LED Chips | Infrared LED Chips / Dice | 1060nM | 4mW | 1mW/sr | 1.25V | 100mA | MQW / GaAs / P (anode) up | 365 x 365μm | Germany | S97 | |||
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EOLC-1070-25 | EPIGAP | LED Chips | Infrared LED Chips / Dice | 1070nM | 47mW | 1.32V | 100mA | InGaAs-based, MQW / n (cathode) up | 350 x 350μm | Germany | S97 | ||||
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EOLC-1300-27 | EPIGAP | LED Chips | Infrared LED Chips / Dice | 1300nM | 19.5mW | 1.1V | 100mA | InGaAs / n (cathode) up | 350 x 350μm | Germany | S97 | ||||
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EOLC-1550-27 | EPIGAP | LED Chips | Infrared LED Chips / Dice | 1550nM | 6.8mW | 1.05V | 100mA | MQW / n (cathode) up | 350 x 350μm | Germany | S97 | ||||
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EOLC-1650-17-1 | EPIGAP | LED Chips | Infrared LED Chips / Dice | 1650nM | 2.5mW | 0.8V | 100mA | InGaAs/InP, MQW / P (anode) up | 360 x 360μm | Germany | S97 | ||||
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EOLC-1720-17-1 | EPIGAP | LED Chips | Infrared LED Chips / Dice | 1720nM | 2.8mW | 0.9V | 100mA | InGaAs, MQW / P (anode) up | 360 x 360μm | Germany | S97 | ||||
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EOLC-1200-27 | EPIGAP | LED Chips | Infrared LED Chips / Dice | 1200nM | 14.4mW | 1.2V | 100mA | InGaAs / n (cathode) up | 350 x 350μm | Germany | S97 |