Update date & time: Dec-16th-2021 14:39
| Datasheet | Image | ModelNo. | Manufacturer | Video | Products | Description | Wavelength λP[nM] | Luminous Intensity [mcd] | Luminous Flux [lm] | Radiometric Power [mW] | Irradiance Po[mW/sr] | Forward voltage Vf[V] | Forward current If[mA] | Package | Package Size | Country of origin | Group |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
|
|
|
|
|||||||||||||
|
|
014MI-U-FA1 | HPO | LED Chips | Infrared LED Chips / Dice | 850nM | 2mW | 1.5V | 20mA | AlGaAs / n (cathode) up | 360 x 360μm | Taiwan | S28 | ||||
|
|
|
HPO-016AP-U-FA1 | HPO | LED Chips | Infrared LED Chips / Dice | 1325nM | 0.5mW | 0.9V | 20mA | InGaAsP / P (anode) up | 400 x 400μm | Taiwan | S28 | ||||
|
|
|
014MI-U-FA0 | HPO | LED Chips | Infrared LED Chips / Dice | 850nM | 2mW | 1.5V | 20mA | AlGaAs / n (cathode) up | 360 x 360μm | Taiwan | S28 | ||||
|
|
|
HPO-014AP-ENG | HPO | LED Chips | Infrared LED Chips / Dice | 1310nM | 0.1mW | 0.9V | 20mA | InGaAsP / P (anode) up | 330 x 330μm | Taiwan | S28 |