Update date & time: Jan-11th-2023 23:34
| Datasheet | Image | ModelNo. | Manufacturer | Video | Products | Description | Wavelength λP[nM] | Luminous Intensity [mcd] | Luminous Flux [lm] | Radiometric Power [mW] | Irradiance Po[mW/sr] | Forward voltage Vf[V] | Forward current If[mA] | Package | Package Size | Country of origin | Group |
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C1750D-35 | Ushio | LED Chips | Infrared LED Chips / Dice | 1750nM | 1.8mW | 1V | 50mA | InGaAsP (Au Pad) | 320 x 320μm | Japan | S23 | ||||
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C1650D-35 | Ushio | LED Chips | Infrared LED Chips / Dice | 1650nM | 1.6mW | 1V | 50mA | InGaAsP (Au Pad) | 320 x 320μm | Japan | S23 | ||||
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C1550D-35 | Ushio | LED Chips | Infrared LED Chips / Dice | 1550nM | 2.9mW | 1V | 50mA | InGaAsP (Au Pad) | 320 x 320μm | Japan | S23 | ||||
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C1450D-35 | Ushio | LED Chips | Infrared LED Chips / Dice | 1450nM | 4.1mW | 1V | 50mA | InGaAsP (Au Pad) | 320 x 320μm | Japan | S23 | ||||
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C1300D-35 | Ushio | LED Chips | Infrared LED Chips / Dice | 1300nM | 6mW | 1V | 50mA | InGaAsP (Au Pad) | 320 x 320μm | Japan | S23 | ||||
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C1200D-35 | Ushio | LED Chips | Infrared LED Chips / Dice | 1200nM | 7.9mW | 1.1V | 50mA | InGaAsP (Au Pad) | 320 x 320μm | Japan | S23 | ||||
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C1150D-35 | Ushio | LED Chips | Infrared LED Chips / Dice | 1150nM | 8.2mW | 1.2V | 50mA | InGaAsP (Au Pad) | 320 x 320μm | Japan | S23 | ||||
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C1100D-35 | Ushio | LED Chips | Infrared LED Chips / Dice | 1100nM | 8.3mW | 1.2V | 50mA | InGaAsP (Au Pad) | 320 x 320μm | Japan | S23 | ||||
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C1050D-35 | Ushio | LED Chips | Infrared LED Chips / Dice | 1050nM | 5.6mW | 1.2V | 50mA | InGaAsP (Au Pad) | 320 x 320μm | Japan | S23 |