Update date & time: Feb-28th-2022 18:39
Datasheet Image Model No. Manufacturer Products Description Wavelength [nM] Video Package Country of Origin Group
D-E1550-2-95-2000-400 Deray 1550nm 2W high power EEL chip Suitable for CW, QCW or pulsed applications and the power is 2W 1550nM Chip / Die China S222
D-E0980-S-0400-3-2500-500 Deray 980nm Single-mode laser EEL Chip Suitable for pulse power applications and the power is 400mW 980nM Chip / Die China S222
D-V0680M-0009-0008-FC1 Deray 680nm VCSEL Chip 680nM Chip / Die China S222
006CH-U-SD5 HPO 650nm VCSEL Chip 650nM Chip / Die Taiwan S28
006CH-U-SD5 HPO 650nm VCSEL Chip 650nM Chip / Die Taiwan S28
006CL-U-SD5 HPO 940nm VCSEL Chip 940nM Chip / Die Taiwan S28
V00132 Vixar Infrared Multi-Mode High Power VCSEL Die 1.99 mm x 1.99 mm 1672 apertures; Die; 2222; 940; M; 3B; Z10X44-4; 10W 940nM Chip / Die USA S49
V00063 Vixar Infrared Multi-Mode High Power VCSEL Die 1.26 mm x 1.26 mm 770 apertures; Die; 2222; 940nM; M; 3B; P10X40; 4W 940nM Chip / Die USA S49
V00156 Vixar Infrared Multi-Mode High Power VCSEL Die 0.90 mm x 1.00 mm 550 apertures Multi-Junction (3J); Die; 2222; 940nM; M; 3B; G10X36; 3W-3J 940nM Chip / Die USA S49
V00155 Vixar Infrared Multi-Mode High Power VCSEL Die 0.90 mm x 1.00 mm 550 apertures Multi-Junction (3J); Die; 2222; 940nM; M; 3B; G10X36; 3W-2J 940nM Chip / Die USA S49
V00081 Vixar Infrared Multi-Mode High Power VCSEL Die 0.90 mm x 1.00 mm 550 apertures; Die; 2222; 940nM; M; 3B; G10X36; 3W 940nM Chip / Die USA S49
V00059 Vixar Infrared Multi-Mode High Power VCSEL Die 0.87 mm x 0.87 mm 281 apertures; Die; 2222; 940nM; M; 3B; Y12X45; 2W 940nM Chip / Die USA S49
V00133 Vixar Infrared Multi-Mode High Power VCSEL Die 1.99 mm x 1.99 mm 1672 apertures; Die; 2222; 850nM; M; 3B; Z10X44-4; 10W 850nM Chip / Die USA S49
V00029 Vixar Infrared Multi-Mode High Power VCSEL Die 1.26 mm x 1.26 mm 770 apertures; Die; 2222; 850nM; M; 3B; P10X40; 4W 850nM Chip / Die USA S49
V00124 Vixar Infrared Multi-Mode High Power VCSEL Die 0.90 mm x 1.00 mm 550 apertures; DIE; 2222; 850nM; M; 3B; G10X36; 3W 850nM Chip / Die USA S49
V00027 Vixar Infrared Multi-Mode High Power VCSEL Die 0.87 mm x 0.87 mm 281 apertures; Die; 2222; 850nM; M; 3B; Y12X45; 2W 850nM Chip / Die USA S49
V00151 Vixar Infrared Multi-Mode High Power VCSEL Die 0.52 mm x 0.52 mm 100 apertures; Die; 2222; 850nM; M; 3B; R10X40; 0.5W 850nM Chip / Die USA S49
V00101 Vixar Infrared Multi-Mode Low Power VCSEL Die 0.175 mm X 0.215 mm 3 apertures; 15 mW; Invisible, reduced beam divergence, non-Gaussian beam shape 940nM Chip / Die USA S49
V00146 Vixar Infrared Multi-Mode Low Power VCSEL Die 0.22 mm x 0.22 mm Single aperture; 7 mW; Visible, improved efficiency, non-Gaussian beam shape Polarization stable 680nM Chip / Die USA S49
V00140 Vixar Infrared Single Spectral Mode Low Power VCSEL Die 0.16 mm x 0.20 mm Single aperture; 0.2 mW; Linewidth<100MHz, +/-0.5nm Polarization stable 895nM Chip / Die USA S49
V00145 Group: 5 Vixar Infrared Single Spectral Mode Low Power VCSEL Die Ta = 100±10°C; IF = 1.4 mA; DC = 100%, 795nm 795nM Chip / Die USA S49
V00145 Group: 4 Vixar Infrared Single Spectral Mode Low Power VCSEL Die Ta = 90±10°C; IF = 1.4 mA; DC = 100%, 795nm 795nM Chip / Die USA S49
V00145 Group: 3 Vixar Infrared Single Spectral Mode Low Power VCSEL Die Ta = 80±10°C; IF = 1.4 mA; DC = 100%, 795nm 795nM Chip / Die USA S49
V00145 Group: 2 Vixar Infrared Single Spectral Mode Low Power VCSEL Die Ta = 70±10°C; IF = 1.4 mA; DC = 100%, 795nm 795nM Chip / Die USA S49
V00145 Group: 1 Vixar Infrared Single Spectral Mode Low Power VCSEL Die Ta = 60±10°C; IF = 1.4 mA; DC = 100%, 795nm 795nM Chip / Die USA S49
HV94-2000P1-H Optowell 940nm High Power VCSEL Chip Peak 2W 940 nm VCSEL Chip by pulse operation 940nM Chip / Die Korea S128
HV85-2000P1-H Optowell 850nm High Power VCSEL Chip Peak 2W 850 nm VCSEL Chip by pulse operation 850nM Chip / Die Korea S128
SM68-3N001 Optowell VCSEL for Optical Communication 680nm Multi mode VCSEL Chip 680nM Chip / Die Korea S128
TSD-8B12-708 Truelight VCSEL Chip 5Gbps, 850nm VCSEL chip for non-hermetic application 850nM Chip / Die Taiwan S46
TSD-9B40-100 Truelight VCSEL Chip 1W 940nm VCSEL chip for non-hermetic package. high PCE for sensor application. 940nM Chip / Die Taiwan S46
TSD-8B40-200 Truelight VCSEL Chip 2W 850nm VCSEL chip for non-hermetic package. high PCE for sensor application 850nM Chip / Die Taiwan S46
TSD-8B30-029 Truelight VCSEL Chip 850nm Oxide VCSEL Emitter 850nM Chip / Die Taiwan S46
650nM-VCSEL iReach 650nm VCSEL Chip 1 aperture 650nm VCSEL 650nM Chip / Die Taiwan S169
SLD266ZS Sony Octa-Beam AlGaAs Laser Diode IR monolithic octa-beam laser diode 790nM Chip / Die Japan S163
SLD177H5 Sony 25Gbps 4ch array VCSEL 850 nm multi-mode VCSEL chip 850nM Chip / Die Japan S163
TSD-8B40-100 Truelight 1W Smart Phone Sensing VCSEL chip VCSEL chip for sensing, power typ 1W 850nM Chip / Die Taiwan S46
TSD-9A30-700 Truelight 10mW Smart Phone Sensing VCSEL chip VCSEL chip for sensing, power typ 10mW 940nM Chip / Die Taiwan S46
TSD-8A30-700 Truelight 10mW Smart Phone Sensing VCSEL chip VCSEL chip for sensing, power typ 10mW 850nM Chip / Die Taiwan S46
TSD-9A20-700 Truelight 3mW Smart Phone Sensing VCSEL chip VCSEL chip for sensing, power typ 3mW 940nM Chip / Die Taiwan S46
TSD-8A20-700 Truelight 3mW Smart Phone Sensing VCSEL chip VCSEL chip for sensing, power typ 3mW 850nM Chip / Die Taiwan S46
TSD-8B12-77X Truelight 25Gbps Communication and sensing VCSEL chip 25Gbps 850nm Oxide-confined VCSEL chip, non-hermetic design 850nM Chip / Die Taiwan S46
TSD-8B12-673 Truelight 25Gbps 850nm Oxide-confined VCSEL chip, non-hermetic design 25Gbps 850nm Oxide-confined VCSEL chip, non-hermetic design 850nM Chip / Die Taiwan S46
TSD-8B12-753 Truelight 4~10Gbps Communication and sensing VCSEL chip High Performance 10 Gbps Oxide VCSEL 850nM Chip / Die Taiwan S46
TSD-8B12-751 Truelight 4~10Gbps Communication and sensing VCSEL chip 10Gbps 850nm Oxide-confined VCSEL chip, non-hermetic design 850nM Chip / Die Taiwan S46
TSD-8B12-706 Truelight 1~4Gbps Communication and sensing VCSEL chip 4.25Gbps 850nm Oxide-confined VCSEL chip, non-hermetic design 850nM Chip / Die Taiwan S46
TK0909V8F Tyntek AlGaAs / GaAs VCSEL Chip 850nM Chip / Die Taiwan S44
SS85-5U001 Optowell Single mode VCSEL Chip 850nm Signle mode VCSEL 850nM Chip / Die Korea S128
HV94-2000P1 Optowell 940nm High Power VCSEL Chip Peak 2W 940 nm VCSEL Chip by pulse operation 940nM Chip / Die Korea S128
HV94-1000P1 Optowell 940nm High Power VCSEL Chip Peak 1W 940 nm VCSEL Chip by pulse operation 940nM Chip / Die Korea S128
HV94-0008M2 Optowell 940nm High Power VCSEL Chip 8mW Multi-mode VCSEL 940nM Chip / Die Korea S128
HV85-0030G1 Optowell 850nm High Power VCSEL Chip 30mW Gaussian Beam VCSEL 850nM Chip / Die Korea S128
HV85-0008G1 Optowell 850nm High Power VCSEL Chip 8mW Gaussian Beam VCSEL 850nM Chip / Die Korea S128
HV85-2000P1 Optowell 850nm High Power VCSEL Chip 2W Multi-mode VCSEL (Pulse) 850nM Chip / Die Korea S128
HV85-1000P1 Optowell 850nm High Power VCSEL Chip 1W Multi-mode VCSEL (Pulse) 850nM Chip / Die Korea S128
HV85-0100M1 Optowell 850nm High Power VCSEL Chip 100mW Multi-mode VCSEL 850nM Chip / Die Korea S128
HV85-0025M1 Optowell 850nm High Power VCSEL Chip 25mW Multi-mode VCSEL 850nM Chip / Die Korea S128
HV85-0010M1 Optowell 850nm High Power VCSEL Chip 10mW Multi-mode VCSEL 850nM Chip / Die Korea S128
SM98-2N001 Optowell VCSEL for Optical Communication 980nm 2.5Gbps Multi-mode VCSEL 850nM Chip / Die Korea S128
SM85-1AH001 Optowell VCSEL for Optical Communication 850nm 14Gbps Multi-mode VCSEL 850nM Chip / Die Korea S128
SM85-1D001 Optowell VCSEL for Optical Communication 850nm 6Gbps Multi-mode VCSEL 850nM Chip / Die Korea S128
SM85-1UH001W Optowell VCSEL for Optical Communication 850nm 25Gbps Multi-mode VCSEL 850nM Chip / Die Korea S128
SM85-3N001 Optowell VCSEL for Optical Communication 850nm 2.5Gbps Multi-mode VCSEL 850nM Chip / Die Korea S128