|
|
D-E1550-2-95-2000-400 |
Deray |
1550nm 2W high power EEL chip |
Suitable for CW, QCW or pulsed applications and the power is 2W |
1550nM |
|
Chip / Die |
China |
S222 |
|
|
D-E0980-S-0400-3-2500-500 |
Deray |
980nm Single-mode laser EEL Chip |
Suitable for pulse power applications and the power is 400mW |
980nM |
|
Chip / Die |
China |
S222 |
|
|
D-V0680M-0009-0008-FC1 |
Deray |
680nm VCSEL Chip |
|
680nM |
|
Chip / Die |
China |
S222 |
|
|
006CH-U-SD5 |
HPO |
650nm VCSEL Chip |
|
650nM |
|
Chip / Die |
Taiwan |
S28 |
|
|
006CH-U-SD5 |
HPO |
650nm VCSEL Chip |
|
650nM |
|
Chip / Die |
Taiwan |
S28 |
|
|
006CL-U-SD5 |
HPO |
940nm VCSEL Chip |
|
940nM |
|
Chip / Die |
Taiwan |
S28 |
|
|
V00132 |
Vixar |
Infrared Multi-Mode High Power VCSEL Die |
1.99 mm x 1.99 mm 1672 apertures; Die; 2222; 940; M; 3B; Z10X44-4; 10W |
940nM |
|
Chip / Die |
USA |
S49 |
|
|
V00063 |
Vixar |
Infrared Multi-Mode High Power VCSEL Die |
1.26 mm x 1.26 mm 770 apertures; Die; 2222; 940nM; M; 3B; P10X40; 4W |
940nM |
|
Chip / Die |
USA |
S49 |
|
|
V00156 |
Vixar |
Infrared Multi-Mode High Power VCSEL Die |
0.90 mm x 1.00 mm 550 apertures Multi-Junction (3J); Die; 2222; 940nM; M; 3B; G10X36; 3W-3J |
940nM |
|
Chip / Die |
USA |
S49 |
|
|
V00155 |
Vixar |
Infrared Multi-Mode High Power VCSEL Die |
0.90 mm x 1.00 mm 550 apertures Multi-Junction (3J); Die; 2222; 940nM; M; 3B; G10X36; 3W-2J |
940nM |
|
Chip / Die |
USA |
S49 |
|
|
V00081 |
Vixar |
Infrared Multi-Mode High Power VCSEL Die |
0.90 mm x 1.00 mm 550 apertures; Die; 2222; 940nM; M; 3B; G10X36; 3W |
940nM |
|
Chip / Die |
USA |
S49 |
|
|
V00059 |
Vixar |
Infrared Multi-Mode High Power VCSEL Die |
0.87 mm x 0.87 mm 281 apertures; Die; 2222; 940nM; M; 3B; Y12X45; 2W |
940nM |
|
Chip / Die |
USA |
S49 |
|
|
V00133 |
Vixar |
Infrared Multi-Mode High Power VCSEL Die |
1.99 mm x 1.99 mm 1672 apertures; Die; 2222; 850nM; M; 3B; Z10X44-4; 10W |
850nM |
|
Chip / Die |
USA |
S49 |
|
|
V00029 |
Vixar |
Infrared Multi-Mode High Power VCSEL Die |
1.26 mm x 1.26 mm 770 apertures; Die; 2222; 850nM; M; 3B; P10X40; 4W |
850nM |
|
Chip / Die |
USA |
S49 |
|
|
V00124 |
Vixar |
Infrared Multi-Mode High Power VCSEL Die |
0.90 mm x 1.00 mm 550 apertures; DIE; 2222; 850nM; M; 3B; G10X36; 3W |
850nM |
|
Chip / Die |
USA |
S49 |
|
|
V00027 |
Vixar |
Infrared Multi-Mode High Power VCSEL Die |
0.87 mm x 0.87 mm 281 apertures; Die; 2222; 850nM; M; 3B; Y12X45; 2W |
850nM |
|
Chip / Die |
USA |
S49 |
|
|
V00151 |
Vixar |
Infrared Multi-Mode High Power VCSEL Die |
0.52 mm x 0.52 mm 100 apertures; Die; 2222; 850nM; M; 3B; R10X40; 0.5W |
850nM |
|
Chip / Die |
USA |
S49 |
|
|
V00101 |
Vixar |
Infrared Multi-Mode Low Power VCSEL Die |
0.175 mm X 0.215 mm 3 apertures; 15 mW; Invisible, reduced beam divergence, non-Gaussian beam shape |
940nM |
|
Chip / Die |
USA |
S49 |
|
|
V00146 |
Vixar |
Infrared Multi-Mode Low Power VCSEL Die |
0.22 mm x 0.22 mm Single aperture; 7 mW; Visible, improved efficiency, non-Gaussian beam shape Polarization stable |
680nM |
|
Chip / Die |
USA |
S49 |
|
|
V00140 |
Vixar |
Infrared Single Spectral Mode Low Power VCSEL Die |
0.16 mm x 0.20 mm Single aperture; 0.2 mW; Linewidth<100MHz, +/-0.5nm Polarization stable |
895nM |
|
Chip / Die |
USA |
S49 |
|
|
V00145 Group: 5 |
Vixar |
Infrared Single Spectral Mode Low Power VCSEL Die |
Ta = 100±10°C; IF = 1.4 mA;
DC = 100%, 795nm |
795nM |
|
Chip / Die |
USA |
S49 |
|
|
V00145 Group: 4 |
Vixar |
Infrared Single Spectral Mode Low Power VCSEL Die |
Ta = 90±10°C; IF = 1.4 mA;
DC = 100%, 795nm |
795nM |
|
Chip / Die |
USA |
S49 |
|
|
V00145 Group: 3 |
Vixar |
Infrared Single Spectral Mode Low Power VCSEL Die |
Ta = 80±10°C; IF = 1.4 mA;
DC = 100%, 795nm |
795nM |
|
Chip / Die |
USA |
S49 |
|
|
V00145 Group: 2 |
Vixar |
Infrared Single Spectral Mode Low Power VCSEL Die |
Ta = 70±10°C; IF = 1.4 mA;
DC = 100%, 795nm |
795nM |
|
Chip / Die |
USA |
S49 |
|
|
V00145 Group: 1 |
Vixar |
Infrared Single Spectral Mode Low Power VCSEL Die |
Ta = 60±10°C; IF = 1.4 mA;
DC = 100%, 795nm |
795nM |
|
Chip / Die |
USA |
S49 |
|
|
HV94-2000P1-H |
Optowell |
940nm High Power VCSEL Chip |
Peak 2W 940 nm VCSEL Chip by pulse operation |
940nM |
|
Chip / Die |
Korea |
S128 |
|
|
HV85-2000P1-H |
Optowell |
850nm High Power VCSEL Chip |
Peak 2W 850 nm VCSEL Chip by pulse operation |
850nM |
|
Chip / Die |
Korea |
S128 |
|
|
SM68-3N001 |
Optowell |
VCSEL for Optical Communication |
680nm Multi mode VCSEL Chip |
680nM |
|
Chip / Die |
Korea |
S128 |
|
|
TSD-8B12-708 |
Truelight |
VCSEL Chip |
5Gbps, 850nm VCSEL chip for non-hermetic application |
850nM |
|
Chip / Die |
Taiwan |
S46 |
|
|
TSD-9B40-100 |
Truelight |
VCSEL Chip |
1W 940nm VCSEL chip for non-hermetic package. high PCE for sensor application. |
940nM |
|
Chip / Die |
Taiwan |
S46 |
|
|
TSD-8B40-200 |
Truelight |
VCSEL Chip |
2W 850nm VCSEL chip for non-hermetic package. high PCE for sensor application |
850nM |
|
Chip / Die |
Taiwan |
S46 |
|
|
TSD-8B30-029 |
Truelight |
VCSEL Chip |
850nm Oxide VCSEL Emitter |
850nM |
|
Chip / Die |
Taiwan |
S46 |
|
|
650nM-VCSEL |
iReach |
650nm VCSEL Chip |
1 aperture 650nm VCSEL |
650nM |
|
Chip / Die |
Taiwan |
S169 |
|
|
SLD266ZS |
Sony |
Octa-Beam AlGaAs Laser Diode |
IR monolithic octa-beam laser diode |
790nM |
|
Chip / Die |
Japan |
S163 |
|
|
SLD177H5 |
Sony |
25Gbps 4ch array VCSEL |
850 nm multi-mode VCSEL chip |
850nM |
|
Chip / Die |
Japan |
S163 |
|
|
TSD-8B40-100 |
Truelight |
1W Smart Phone Sensing VCSEL chip |
VCSEL chip for sensing, power typ 1W |
850nM |
|
Chip / Die |
Taiwan |
S46 |
|
|
TSD-9A30-700 |
Truelight |
10mW Smart Phone Sensing VCSEL chip |
VCSEL chip for sensing, power typ 10mW |
940nM |
|
Chip / Die |
Taiwan |
S46 |
|
|
TSD-8A30-700 |
Truelight |
10mW Smart Phone Sensing VCSEL chip |
VCSEL chip for sensing, power typ 10mW |
850nM |
|
Chip / Die |
Taiwan |
S46 |
|
|
TSD-9A20-700 |
Truelight |
3mW Smart Phone Sensing VCSEL chip |
VCSEL chip for sensing, power typ 3mW |
940nM |
|
Chip / Die |
Taiwan |
S46 |
|
|
TSD-8A20-700 |
Truelight |
3mW Smart Phone Sensing VCSEL chip |
VCSEL chip for sensing, power typ 3mW |
850nM |
|
Chip / Die |
Taiwan |
S46 |
|
|
TSD-8B12-77X |
Truelight |
25Gbps Communication and sensing VCSEL chip |
25Gbps 850nm Oxide-confined VCSEL chip, non-hermetic design |
850nM |
|
Chip / Die |
Taiwan |
S46 |
|
|
TSD-8B12-673 |
Truelight |
25Gbps 850nm Oxide-confined VCSEL chip, non-hermetic design |
25Gbps 850nm Oxide-confined VCSEL chip, non-hermetic design |
850nM |
|
Chip / Die |
Taiwan |
S46 |
|
|
TSD-8B12-753 |
Truelight |
4~10Gbps Communication and sensing VCSEL chip |
High Performance 10 Gbps Oxide VCSEL |
850nM |
|
Chip / Die |
Taiwan |
S46 |
|
|
TSD-8B12-751 |
Truelight |
4~10Gbps Communication and sensing VCSEL chip |
10Gbps 850nm Oxide-confined VCSEL chip, non-hermetic design |
850nM |
|
Chip / Die |
Taiwan |
S46 |
|
|
TSD-8B12-706 |
Truelight |
1~4Gbps Communication and sensing VCSEL chip |
4.25Gbps 850nm Oxide-confined VCSEL chip, non-hermetic design |
850nM |
|
Chip / Die |
Taiwan |
S46 |
|
|
TK0909V8F |
Tyntek |
AlGaAs / GaAs VCSEL Chip |
|
850nM |
|
Chip / Die |
Taiwan |
S44 |
|
|
SS85-5U001 |
Optowell |
Single mode VCSEL Chip |
850nm Signle mode VCSEL |
850nM |
|
Chip / Die |
Korea |
S128 |
|
|
HV94-2000P1 |
Optowell |
940nm High Power VCSEL Chip |
Peak 2W 940 nm VCSEL Chip by pulse operation |
940nM |
|
Chip / Die |
Korea |
S128 |
|
|
HV94-1000P1 |
Optowell |
940nm High Power VCSEL Chip |
Peak 1W 940 nm VCSEL Chip by pulse operation |
940nM |
|
Chip / Die |
Korea |
S128 |
|
|
HV94-0008M2 |
Optowell |
940nm High Power VCSEL Chip |
8mW Multi-mode VCSEL |
940nM |
|
Chip / Die |
Korea |
S128 |
|
|
HV85-0030G1 |
Optowell |
850nm High Power VCSEL Chip |
30mW Gaussian Beam VCSEL |
850nM |
|
Chip / Die |
Korea |
S128 |
|
|
HV85-0008G1 |
Optowell |
850nm High Power VCSEL Chip |
8mW Gaussian Beam VCSEL |
850nM |
|
Chip / Die |
Korea |
S128 |
|
|
HV85-2000P1 |
Optowell |
850nm High Power VCSEL Chip |
2W Multi-mode VCSEL (Pulse) |
850nM |
|
Chip / Die |
Korea |
S128 |
|
|
HV85-1000P1 |
Optowell |
850nm High Power VCSEL Chip |
1W Multi-mode VCSEL (Pulse) |
850nM |
|
Chip / Die |
Korea |
S128 |
|
|
HV85-0100M1 |
Optowell |
850nm High Power VCSEL Chip |
100mW Multi-mode VCSEL |
850nM |
|
Chip / Die |
Korea |
S128 |
|
|
HV85-0025M1 |
Optowell |
850nm High Power VCSEL Chip |
25mW Multi-mode VCSEL |
850nM |
|
Chip / Die |
Korea |
S128 |
|
|
HV85-0010M1 |
Optowell |
850nm High Power VCSEL Chip |
10mW Multi-mode VCSEL |
850nM |
|
Chip / Die |
Korea |
S128 |
|
|
SM98-2N001 |
Optowell |
VCSEL for Optical Communication |
980nm 2.5Gbps Multi-mode VCSEL |
850nM |
|
Chip / Die |
Korea |
S128 |
|
|
SM85-1AH001 |
Optowell |
VCSEL for Optical Communication |
850nm 14Gbps Multi-mode VCSEL |
850nM |
|
Chip / Die |
Korea |
S128 |
|
|
SM85-1D001 |
Optowell |
VCSEL for Optical Communication |
850nm 6Gbps Multi-mode VCSEL |
850nM |
|
Chip / Die |
Korea |
S128 |
|
|
SM85-1UH001W |
Optowell |
VCSEL for Optical Communication |
850nm 25Gbps Multi-mode VCSEL |
850nM |
|
Chip / Die |
Korea |
S128 |
|
|
SM85-3N001 |
Optowell |
VCSEL for Optical Communication |
850nm 2.5Gbps Multi-mode VCSEL |
850nM |
|
Chip / Die |
Korea |
S128 |