Update date & time: Nov-08th-2018 17:09
Datasheet Image Model No. Products Wavelength λP[nM] Luminous Intensity [mcd] Luminous Flux [lm] Radiometric Power [mW] Irradiance Po[mW/sr] Forward voltage Vf[V] Forward current If[mA] Directivity 2Δθ[°] Type Package Package Size Country of origin In Stock Group
YL-GaAs-940nM Infrared LED Wafer 940nM Wafer GaAs Wafer 4 inch Taiwan S28
YL-GaAs-850nM Infrared LED Wafer 850nM Wafer GaAs Wafer 4 inch Taiwan S28
YL-C680-35 Infrared LED Chips / Dice 680nM 3mW 1.8V 20mA Chip / Die AlGaAs 320 x 320μm Japan S39